NSBC113EPDXV6T1
- Manufacturer's Part No.:NSBC113EPDXV6T1
- Manufacturer:
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- Series:-
- Description:TRANS PREBIAS NPN/PNP SOT563
- Datasheet:
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- Available: 590
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NSBC113EPDXV6T1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - Bipolar (BJT) - Arrays, Pre-Biased
- Series-
- ECCNEAR99
- MountSurface Mount
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Pin Count6
- Published2005
- Part StatusObsolete
- SubcategoryBIP General Purpose Small Signal
- REACH StatusREACH Unaffected
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Mounting TypeSurface Mount
- Terminal FormFLAT
- Current Rating100mA
- Package / CaseSOT-563, SOT-666
- Terminal FinishTin (Sn)
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Base Part NumberNSBC1*
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 1
- Number of Elements2
- Voltage - Rated DC50V
- Qualification StatusNot Qualified
- Resistor - Base (R1)1k Ω
- Max Collector Current100mA
- Max Power Dissipation500mW
- Polarity/Channel TypeNPN AND PNP
- Reach Compliance Codeunknown
- Number of Terminations6
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Resistor - Emitter Base (R2)1k Ω
- Peak Reflow Temperature (Cel)260
- Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 10mA
- Collector Emitter Voltage (VCEO)250mV
- Current - Collector Cutoff (Max)500nA
- Collector Emitter Breakdown Voltage50V
- DC Current Gain (hFE) (Min) @ Ic, Vce3 @ 5mA 10V
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- RoHS StatusRoHS non-compliant
- JESD-30 CodeR-PDSO-F6
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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