NSM11156DW6T1G
- Manufacturer's Part No.:NSM11156DW6T1G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:TRANS PNP PREBIAS/PNP 0.23W SC88
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 12795
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NSM11156DW6T1G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - Bipolar (BJT) - Arrays, Pre-Biased
- Series-
- Polarity/Channel TypePNP
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Package / Case6-TSSOP, SC-88, SOT-363
- Part StatusObsolete
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 weeks ago)
- MountSurface Mount
- Number of Pins6
- PackagingTape & Reel (TR)
- Number of Terminations6
- Terminal FinishTin (Sn)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Lead FreeLead Free
- Published2008
- Pbfree Codeyes
- HTS Code8541.21.00.95
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 1.0
- Max Power Dissipation230mW
- Transistor Type1 PNP Pre-Biased, 1 PNP
- Voltage - Collector Emitter Breakdown (Max)50V 65V
- Resistor - Base (R1)10k Ω
- Resistor - Emitter Base (R2)10k Ω
- Current - Collector Cutoff (Max)500nA
- Power - Max230mW
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Transistor ApplicationSWITCHING
- Collector Emitter Voltage (VCEO)250mV
- Max Collector Current100mA
- Collector Emitter Breakdown Voltage65V
- DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA 10V / 220 @ 2mA 5V
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA / 650mV @ 5mA, 100mA
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
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