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NSM11156DW6T1G

  • Available: 12795

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NSM11156DW6T1G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • Series
    -
  • Polarity/Channel Type
    PNP
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Part Status
    Obsolete
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 2 weeks ago)
  • Mount
    Surface Mount
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Number of Terminations
    6
  • Terminal Finish
    Tin (Sn)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Pin Count
    6
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
  • Lead Free
    Lead Free
  • Published
    2008
  • Pbfree Code
    yes
  • HTS Code
    8541.21.00.95
  • Additional Feature
    BUILT IN BIAS RESISTOR RATIO IS 1.0
  • Max Power Dissipation
    230mW
  • Transistor Type
    1 PNP Pre-Biased, 1 PNP
  • Voltage - Collector Emitter Breakdown (Max)
    50V 65V
  • Resistor - Base (R1)
    10k Ω
  • Resistor - Emitter Base (R2)
    10k Ω
  • Current - Collector Cutoff (Max)
    500nA
  • Power - Max
    230mW
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Transistor Application
    SWITCHING
  • Collector Emitter Voltage (VCEO)
    250mV
  • Max Collector Current
    100mA
  • Collector Emitter Breakdown Voltage
    65V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    35 @ 5mA 10V / 220 @ 2mA 5V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300μA, 10mA / 650mV @ 5mA, 100mA

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-609 Code
    e3

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