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NSTB1002DXV5T1G
- Manufacturer's Part No.:NSTB1002DXV5T1G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:TRANS NPN PREBIAS/PNP 0.5W SOT55
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- In Stock: 771119
- Available: 7
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.34179 | US $0.34 |
10+ | US $0.22786 | US $2.28 |
30+ | US $0.17090 | US $5.13 |
100+ | US $0.13672 | US $13.67 |
500+ | US $0.12532 | US $62.66 |
1000+ | US $0.11393 | US $113.93 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NSTB1002DXV5T1G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - Bipolar (BJT) - Arrays, Pre-Biased
- Series-
- ECCNEAR99
- Width1.3mm
- Height600μm
- Length1.7mm
- hFE Min250
- PolarityNPN, PNP
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count5
- Published2006
- Part StatusActive
- Pbfree Codeyes
- SubcategoryBIP General Purpose Small Signal
- REACH StatusREACH Unaffected
- ConfigurationCASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormFLAT
- Current Rating100mA
- Number of Pins5
- Package / CaseSOT-553
- Terminal FinishTin (Sn)
- Transistor Type1 NPN Pre-Biased, 1 PNP
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time17 Weeks
- Power Dissipation357mW
- Terminal PositionDUAL
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 1
- Number of Elements2
- Qualification StatusNot Qualified
- Resistor - Base (R1)47k Ω
- Transition Frequency250MHz
- Max Collector Current200mA
- Max Power Dissipation500mW
- Frequency - Transition250MHz
- Number of Terminations5
- Transistor ApplicationSWITCHING
- Turn On Time-Max (ton)70ns
- Turn Off Time-Max (toff)300ns
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Reflow Temperature-Max (s)NOT SPECIFIED
- Emitter Base Voltage (VEBO)6V
- Continuous Collector Current-200mA
- Resistor - Emitter Base (R2)47k Ω
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA / 400mV @ 5mA, 50mA
- Current - Collector (Ic) (Max)100mA 200mA
- Collector Emitter Voltage (VCEO)250mV
- Current - Collector Cutoff (Max)500nA
- Collector Emitter Breakdown Voltage40V
- Collector Emitter Saturation Voltage250mV
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V / 100 @ 1mA 10V
- Voltage - Collector Emitter Breakdown (Max)50V 40V
Environmental & Export Classifications
- HTSUS8541.21.0075
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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