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NSTB1002DXV5T1G

  • In Stock: 771119
  • Available: 7

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.34179US $0.34
10+US $0.22786US $2.28
30+US $0.17090US $5.13
100+US $0.13672US $13.67
500+US $0.12532US $62.66
1000+US $0.11393US $113.93

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NSTB1002DXV5T1G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • Series
    -
  • ECCN
    EAR99
  • Width
    1.3mm
  • Height
    600μm
  • Length
    1.7mm
  • hFE Min
    250
  • Polarity
    NPN, PNP
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    5
  • Published
    2006
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    BIP General Purpose Small Signal
  • REACH Status
    REACH Unaffected
  • Configuration
    CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    FLAT
  • Current Rating
    100mA
  • Number of Pins
    5
  • Package / Case
    SOT-553
  • Terminal Finish
    Tin (Sn)
  • Transistor Type
    1 NPN Pre-Biased, 1 PNP
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    17 Weeks
  • Power Dissipation
    357mW
  • Terminal Position
    DUAL
  • Additional Feature
    BUILT IN BIAS RESISTOR RATIO IS 1
  • Number of Elements
    2
  • Qualification Status
    Not Qualified
  • Resistor - Base (R1)
    47k Ω
  • Transition Frequency
    250MHz
  • Max Collector Current
    200mA
  • Max Power Dissipation
    500mW
  • Frequency - Transition
    250MHz
  • Number of Terminations
    5
  • Transistor Application
    SWITCHING
  • Turn On Time-Max (ton)
    70ns
  • Turn Off Time-Max (toff)
    300ns
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Emitter Base Voltage (VEBO)
    6V
  • Continuous Collector Current
    -200mA
  • Resistor - Emitter Base (R2)
    47k Ω
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300μA, 10mA / 400mV @ 5mA, 50mA
  • Current - Collector (Ic) (Max)
    100mA 200mA
  • Collector Emitter Voltage (VCEO)
    250mV
  • Current - Collector Cutoff (Max)
    500nA
  • Collector Emitter Breakdown Voltage
    40V
  • Collector Emitter Saturation Voltage
    250mV
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA 10V / 100 @ 1mA 10V
  • Voltage - Collector Emitter Breakdown (Max)
    50V 40V

Environmental & Export Classifications

  • HTSUS
    8541.21.0075
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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