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NSVB114YPDXV6T1G
- Manufacturer's Part No.:NSVB114YPDXV6T1G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:TRANS BRT 50V 100MA SOT563
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- In Stock: 10547
- Available: 10547
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.32226 | US $0.32 |
10+ | US $0.21484 | US $2.15 |
30+ | US $0.16113 | US $4.83 |
100+ | US $0.12890 | US $12.89 |
500+ | US $0.11816 | US $59.08 |
1000+ | US $0.10742 | US $107.42 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NSVB114YPDXV6T1G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - Bipolar (BJT) - Arrays, Pre-Biased
- Series-
- ECCNEAR99
- MountSurface Mount
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2014
- Part StatusObsolete
- Pbfree Codeyes
- Power - Max500mW
- SubcategoryBIP General Purpose Small Signal
- REACH StatusREACH Unaffected
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Mounting TypeSurface Mount
- Terminal FormFLAT
- Package / CaseSOT-563, SOT-666
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO 4.7
- Number of Elements2
- Reference StandardAEC-Q101
- Resistor - Base (R1)10k Ω
- Max Collector Current100mA
- Max Power Dissipation500mW
- Polarity/Channel TypeNPN AND PNP
- Number of Terminations6
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Resistor - Emitter Base (R2)47k Ω
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Voltage (VCEO)250mV
- Current - Collector Cutoff (Max)500nA
- Collector Emitter Breakdown Voltage50V
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PDSO-F6
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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