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NSVBC857BLT3G

  • Available: 10609

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.17172US $0.17
10+US $0.11448US $1.14
30+US $0.08586US $2.58
100+US $0.06869US $6.87
500+US $0.06296US $31.48
1000+US $0.05724US $57.24

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NSVBC857BLT3G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    225mW
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    3
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Terminal Finish
    Tin (Sn)
  • Transistor Type
    PNP
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    4 Weeks
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Reference Standard
    AEC-Q101
  • Radiation Hardening
    No
  • Transition Frequency
    100MHz
  • Max Collector Current
    100mA
  • Max Power Dissipation
    225mW
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    PNP
  • Frequency - Transition
    100MHz
  • Number of Terminations
    3
  • Transistor Element Material
    SILICON
  • Collector Base Voltage (VCBO)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    650mV @ 5mA, 100mA
  • Collector Emitter Voltage (VCEO)
    650mV
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Collector Emitter Breakdown Voltage
    45V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    220 @ 2mA 5V

Environmental & Export Classifications

  • HTSUS
    8541.21.0075
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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