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NSVEMT1DXV6T5G

  • Available: 4

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.32226US $0.32
10+US $0.21484US $2.15
30+US $0.16113US $4.83
100+US $0.12890US $12.89
500+US $0.11816US $59.08
1000+US $0.10742US $107.42

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NSVEMT1DXV6T5G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • VCEsat-Max
    0.5 V
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    500mW
  • REACH Status
    REACH Unaffected
  • Configuration
    SEPARATE, 2 ELEMENTS
  • Mounting Type
    Surface Mount
  • Terminal Form
    FLAT
  • Package / Case
    SOT-563, SOT-666
  • Terminal Finish
    Tin (Sn)
  • Transistor Type
    2 PNP (Dual)
  • Lifecycle Status
    ACTIVE (Last Updated: 2 weeks ago)
  • Factory Lead Time
    17 Weeks
  • Number of Elements
    2
  • Reference Standard
    AEC-Q101
  • Transition Frequency
    140MHz
  • Max Collector Current
    100mA
  • Max Power Dissipation
    500mW
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    PNP
  • Frequency - Transition
    140MHz
  • Number of Terminations
    6
  • Transistor Application
    AMPLIFIER
  • Transistor Element Material
    SILICON
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 5mA, 50mA
  • Collector Emitter Voltage (VCEO)
    500mV
  • Current - Collector Cutoff (Max)
    500pA ICBO
  • Collector Emitter Breakdown Voltage
    60V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 1mA 6V

Environmental & Export Classifications

  • HTSUS
    8541.21.0075
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PDSO-F6
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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