NTA4001NT1G
- Manufacturer's Part No.:NTA4001NT1G
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- Description:MOSFET N-CH 20V 0.238A SOT-416
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- In Stock: 210
- Available: 1456039
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.09364 | US $0.09 |
10+ | US $0.06242 | US $0.62 |
30+ | US $0.04682 | US $1.40 |
100+ | US $0.03745 | US $3.74 |
500+ | US $0.03433 | US $17.17 |
1000+ | US $0.03121 | US $31.21 |
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- Description
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The NTA4001NT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for various applications, including power management, switching, and amplification in electronic circuits.
Key Features:
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Type: N-channel MOSFET
- The NTA4001NT1G is specifically designed to conduct current when a positive voltage is applied to the gate terminal relative to the source terminal.
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Voltage Rating:
- The maximum drain-source voltage (V_DS) is typically rated at 30V, making it suitable for low to moderate voltage applications.
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Current Rating:
- The device can handle a continuous drain current (I_D) of up to 4.5A, which allows it to drive moderate loads effectively.
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R_DS(on):
- The on-resistance (R_DS(on)) is low, typically around 0.045 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing efficiency.
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Gate Threshold Voltage (V_GS(th)):
- The gate threshold voltage is in the range of 1V to 3V, which indicates the minimum gate voltage required to turn the MOSFET on. This feature allows for compatibility with low-voltage control signals.
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Package Type:
- The NTA4001NT1G is available in a surface-mount package, specifically the SOT-23 package, which is compact and suitable for space-constrained applications.
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Thermal Characteristics:
- The device has a thermal resistance (RθJA) that allows for efficient heat dissipation, which is crucial for maintaining performance and reliability during operation.
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Applications:
- Common applications include load switching, power management circuits, and as a switch in various electronic devices. It is also used in battery management systems and motor control applications.
Electrical Characteristics:
- Maximum Gate-Source Voltage (V_GS): ±20V
- Maximum Power Dissipation (P_D): Typically around 1.25W, depending on the thermal conditions.
- Body Diode Characteristics: The NTA4001NT1G features an intrinsic body diode, which allows for current flow in the reverse direction, useful in certain applications like synchronous rectification.
Summary:
The NTA4001NT1G from ON Semiconductor is a versatile N-channel MOSFET that combines low on-resistance, moderate voltage and current ratings, and a compact package design, making it an excellent choice for a variety of electronic applications. Its efficient performance and reliability make it suitable for both consumer and industrial electronics.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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