NTGD3133PT1G
- Manufacturer's Part No.:NTGD3133PT1G
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- Series:-
- Description:MOSFET 2P-CH 20V 1.6A 6TSOP
- Datasheet:
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- Available: 10719
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTGD3133PT1G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- Polarity/Channel TypeN-CHANNEL
- Time@Peak Reflow Temperature-Max (s)40
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Part StatusObsolete
- Operating Temperature-55°C~150°C TJ
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- MountSurface Mount
- Number of Pins6
- PackagingTape & Reel (TR)
- SubcategoryOther Transistors
- Number of Terminations6
- Terminal FinishTin (Sn)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- Lead FreeLead Free
- Published2006
- Pbfree Codeyes
- Max Power Dissipation560mW
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Power Dissipation1.1W
- Turn-Off Delay Time13.2 ns
- Operating ModeENHANCEMENT MODE
- Drain Current-Max (Abs) (ID)2.5A
- Drain-source On Resistance-Max0.145Ohm
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss)20V
- Continuous Drain Current (ID)1.6A
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage-20V
- FET Type2 P-Channel (Dual)
- Vgs(th) (Max) @ Id1.4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds400pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs5.5nC @ 4.5V
- FET FeatureLogic Level Gate
- Rise Time12.7ns
- Fall Time (Typ)12.7 ns
- Rds On (Max) @ Id, Vgs145m Ω @ 2.2A, 4.5V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
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