NTGD3149CT1G
- Manufacturer's Part No.:NTGD3149CT1G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET N/P-CH 20V 6-TSOP
- Datasheet:
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- Available: 10437
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTGD3149CT1G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- MountSurface Mount
- FET TypeN and P-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2008
- Rise Time5.3ns
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Fall Time (Typ)29.5 ns
- Terminal FinishTin (Sn)
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
- Power Dissipation900mW
- Number of Elements2
- Vgs(th) (Max) @ Id1V @ 250μA
- Turn-Off Delay Time33.3 ns
- Qualification StatusNot Qualified
- Element ConfigurationDual
- Max Power Dissipation900mW
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations6
- Rds On (Max) @ Id, Vgs60m Ω @ 3.5A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs5.5nC @ 4.5V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)3.5A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Breakdown Voltage20V
- Input Capacitance (Ciss) (Max) @ Vds387pF @ 10V
- Current - Continuous Drain (Id) @ 25°C3.2A 2.4A
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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