EnglishEnglish
My Account

Hello welcome to Chipsmall!

  • My ProfileMy Profile
  • Address ManagementAddress Management
  • Change PasswordChange Password
  • Order Status & HistoryOrder Status & History
Cart
RFQ List
All PRODUCTS
Image is for your reference only, please check specifications for details
iconCompare
icon

NTHC5513T1G

  • Available: 421931

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.87500US $1.88
10+US $1.25000US $12.50
30+US $0.93750US $28.13
100+US $0.75000US $75.00
500+US $0.68750US $343.75
1000+US $0.62500US $625.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ

Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NTHC5513T1G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Width
    1.7mm
  • Height
    1.1mm
  • Length
    3.1mm
  • Weight
    4.535924g
  • FET Type
    N and P-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2005
  • Rise Time
    13ns
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    600 mV
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    C BEND
  • Current Rating
    3.1A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SMD, Flat Lead
  • Terminal Finish
    Tin (Sn)
  • Base Part Number
    NTHC5513
  • Lifecycle Status
    ACTIVE (Last Updated: 1 week ago)
  • Factory Lead Time
    2 Weeks
  • Power Dissipation
    1.1W
  • Threshold Voltage
    600mV
  • Number of Elements
    2
  • Turn On Delay Time
    7 ns
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Voltage - Rated DC
    20V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    33 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    1.1W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    80m Ω @ 2.9A, 4.5V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    4nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    12V
  • Continuous Drain Current (ID)
    3.9A
  • Peak Reflow Temperature (Cel)
    260
  • Pulsed Drain Current-Max (IDM)
    10A
  • Drain to Source Breakdown Voltage
    -20V
  • Input Capacitance (Ciss) (Max) @ Vds
    180pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    2.9A 2.2A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

  • Shipping Methods

    Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.

  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

Index:

  • Professional Platform

  • Full-speed Delivery

  • Wide Variety of Products

  • 365 Days of Quality Assurance