NTHD2102PT1G
- Manufacturer's Part No.:NTHD2102PT1G
- Manufacturer:
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- Sub-Categories:
- Series:-
- Description:MOSFET 2P-CH 8V 3.4A CHIPFET
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 11810
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTHD2102PT1G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- MountSurface Mount
- FET Type2 P-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2004
- Rise Time20ns
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormC BEND
- Current Rating-3.4A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SMD, Flat Lead
- Fall Time (Typ)20 ns
- Terminal FinishTin (Sn)
- Base Part NumberNTHD2102P
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- Power Dissipation1.1W
- Number of Elements2
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Voltage - Rated DC-8V
- Turn-Off Delay Time20 ns
- Qualification StatusNot Qualified
- Max Power Dissipation1.1W
- Operating Temperature-55°C~150°C TJ
- Reach Compliance Codeunknown
- Number of Terminations8
- Rds On (Max) @ Id, Vgs58m Ω @ 3.4A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs16nC @ 2.5V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)4.6A
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage-8V
- Input Capacitance (Ciss) (Max) @ Vds715pF @ 6.4V
- Current - Continuous Drain (Id) @ 25°C3.4A
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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