NTHD3100CT1G
- Manufacturer's Part No.:NTHD3100CT1G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET N/P-CH 20V CHIPFET
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 9000
- Available: 378276
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.03206 | US $1.03 |
10+ | US $0.68804 | US $6.88 |
30+ | US $0.51603 | US $15.48 |
100+ | US $0.41282 | US $41.28 |
500+ | US $0.37842 | US $189.21 |
1000+ | US $0.34402 | US $344.02 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTHD3100CT1G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- Width1.65mm
- Height1.05mm
- Length3.05mm
- Weight4.535924g
- FET TypeN and P-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2005
- Rise Time11.7ns
- FET FeatureLogic Level Gate
- Part StatusActive
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormC BEND
- Current Rating2.9A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SMD, Flat Lead
- Fall Time (Typ)11.7 ns
- Terminal FinishTin (Sn)
- Base Part NumberNTHD3100C
- Lifecycle StatusACTIVE (Last Updated: 7 hours ago)
- Factory Lead Time6 Weeks
- Power Dissipation1.1W
- Threshold Voltage-1.5V
- Number of Elements2
- Turn On Delay Time6.3 ns
- Vgs(th) (Max) @ Id1.2V @ 250μA
- Voltage - Rated DC20V
- Radiation HardeningNo
- Turn-Off Delay Time16 ns
- Element ConfigurationDual
- Max Power Dissipation1.1W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations8
- Rds On (Max) @ Id, Vgs80m Ω @ 2.9A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs2.3nC @ 4.5V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)3.9A
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage-20V
- Input Capacitance (Ciss) (Max) @ Vds165pF @ 10V
- Current - Continuous Drain (Id) @ 25°C2.9A 3.2A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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