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NTHD3100CT1

  • In Stock: 720000
  • Available: 9824

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.53100US $0.53
10+US $0.35400US $3.54
30+US $0.26550US $7.97
100+US $0.21240US $21.24
500+US $0.19470US $97.35
1000+US $0.17700US $177.00

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NTHD3100CT1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • FET Type
    N and P-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2006
  • Rise Time
    11.7ns
  • FET Feature
    Logic Level Gate
  • Part Status
    Obsolete
  • Pbfree Code
    no
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    C BEND
  • Current Rating
    3.9A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SMD, Flat Lead
  • Fall Time (Typ)
    11.7 ns
  • Base Part Number
    NTHD3100C
  • Lifecycle Status
    OBSOLETE (Last Updated: 4 days ago)
  • Power Dissipation
    1.1W
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Voltage - Rated DC
    20V
  • Turn-Off Delay Time
    16 ns
  • Qualification Status
    Not Qualified
  • Element Configuration
    Dual
  • Max Power Dissipation
    1.1W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Reach Compliance Code
    not_compliant
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    80m Ω @ 2.9A, 4.5V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    2.9A
  • Gate Charge (Qg) (Max) @ Vgs
    2.3nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    8V
  • Continuous Drain Current (ID)
    3.2A
  • Peak Reflow Temperature (Cel)
    240
  • Pulsed Drain Current-Max (IDM)
    12A
  • Drain to Source Breakdown Voltage
    -20V
  • Input Capacitance (Ciss) (Max) @ Vds
    165pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    2.9A 3.2A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS non-compliant
  • JESD-609 Code
    e0
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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