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NTHD3101FT1G

  • In Stock: 15000
  • Available: 575551
  • Updated: 8 HRS ago

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.01520US $2.02
10+US $1.81368US $18.14
30+US $1.41064US $42.32
100+US $1.15874US $115.87
500+US $1.10836US $554.18
1000+US $1.00760US $1007.60

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NTHD3101FT1G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    -
  • ECCN
    EAR99
  • Width
    1.65mm
  • Height
    1.05mm
  • Length
    3.05mm
  • Weight
    4.535924g
  • FET Type
    P-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2006
  • Rise Time
    11.7ns
  • Vgs (Max)
    ±8V
  • Resistance
    64MOhm
  • Technology
    MOSFET (Metal Oxide)
  • FET Feature
    Schottky Diode (Isolated)
  • Nominal Vgs
    -450 mV
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    C BEND
  • Current Rating
    -3.2A
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SMD, Flat Lead
  • Contact Plating
    Tin
  • Fall Time (Typ)
    12.4 ns
  • Lifecycle Status
    ACTIVE (Last Updated: 2 hours ago)
  • Factory Lead Time
    5 Weeks
  • Power Dissipation
    1.1W
  • Terminal Position
    DUAL
  • Threshold Voltage
    -1.5V
  • Number of Elements
    1
  • Turn On Delay Time
    5.8 ns
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Voltage - Rated DC
    -20V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    16 ns
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    1.1W Ta
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    80m Ω @ 3.2A, 4.5V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    7.4nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    8V
  • Continuous Drain Current (ID)
    4.4A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    20V
  • Drain to Source Breakdown Voltage
    -20V
  • Input Capacitance (Ciss) (Max) @ Vds
    680pF @ 10V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Current - Continuous Drain (Id) @ 25°C
    3.2A Tj

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

  • Shipping Methods

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  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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