NTHD4102PT3G
- Manufacturer's Part No.:NTHD4102PT3G
- Manufacturer:
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- Series:-
- Description:MOSFET 2P-CH 20V 2.9A CHIPFET
- Datasheet:
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- Available: 10243
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTHD4102PT3G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- FET Type2 P-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2005
- Rise Time12ns
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormC BEND
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SMD, Flat Lead
- Fall Time (Typ)12 ns
- Terminal FinishTin (Sn)
- Base Part NumberNTHD4102P
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 weeks ago)
- Power Dissipation1.1W
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements2
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Turn-Off Delay Time32 ns
- Qualification StatusNot Qualified
- Element ConfigurationDual
- Max Power Dissipation1.1W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs80m Ω @ 2.9A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs8.6nC @ 4.5V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)2.9A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)20V
- Drain to Source Breakdown Voltage-20V
- Input Capacitance (Ciss) (Max) @ Vds750pF @ 16V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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