NTHD4508NT1G
- Manufacturer's Part No.:NTHD4508NT1G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET 2N-CH 20V 3A CHIPFET
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 669
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.63886 | US $2.64 |
10+ | US $1.75924 | US $17.59 |
30+ | US $1.31943 | US $39.58 |
100+ | US $1.05554 | US $105.55 |
500+ | US $0.96758 | US $483.79 |
1000+ | US $0.87962 | US $879.62 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTHD4508NT1G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- Width1.7mm
- Height1.1mm
- Length3.1mm
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2004
- Rise Time15ns
- FET FeatureLogic Level Gate
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormC BEND
- Current Rating3.1A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SMD, Flat Lead
- Fall Time (Typ)15 ns
- Terminal FinishTin (Sn)
- Base Part NumberNTHD4508N
- Lifecycle StatusACTIVE (Last Updated: 11 hours ago)
- Factory Lead Time6 Weeks
- Power Dissipation1.13W
- Threshold Voltage1.2V
- Number of Elements2
- Turn On Delay Time5 ns
- Vgs(th) (Max) @ Id1.2V @ 250μA
- Voltage - Rated DC20V
- Radiation HardeningNo
- Turn-Off Delay Time10 ns
- Element ConfigurationDual
- Max Power Dissipation2.1W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs75m Ω @ 3.1A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs4nC @ 4.5V
- Gate to Source Voltage (Vgs)12V
- Continuous Drain Current (ID)4.1A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.075Ohm
- Pulsed Drain Current-Max (IDM)10A
- Drain to Source Breakdown Voltage20V
- Input Capacitance (Ciss) (Max) @ Vds180pF @ 10V
- Current - Continuous Drain (Id) @ 25°C3A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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