NTJD1155LT1
- Manufacturer's Part No.:NTJD1155LT1
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- Sub-Categories:
- Series:-
- Description:MOSFET N/P-CH 8V 1.3A SOT-363
- Datasheet:
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- Available: 401
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTJD1155LT1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- FET TypeN and P-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Pin Count6
- Published2009
- FET FeatureStandard
- Part StatusObsolete
- Pbfree Codeno
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- Current Rating-1.3A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / Case6-TSSOP, SC-88, SOT-363
- Terminal FinishTin/Lead (Sn80Pb20)
- Base Part NumberNTJD1155
- Lifecycle StatusOBSOLETE (Last Updated: 2 weeks ago)
- Power Dissipation400mW
- Number of Elements2
- Vgs(th) (Max) @ Id1V @ 250μA
- Voltage - Rated DC-8V
- Qualification StatusNot Qualified
- Element ConfigurationDual
- Max Power Dissipation400mW
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Reach Compliance Codenot_compliant
- Number of Terminations6
- Rds On (Max) @ Id, Vgs175m Ω @ 1.2A, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate to Source Voltage (Vgs)1V
- Continuous Drain Current (ID)1.3A
- Peak Reflow Temperature (Cel)240
- Drain to Source Voltage (Vdss)8V
- Drain-source On Resistance-Max0.175Ohm
- Drain to Source Breakdown Voltage-8V
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- RoHS StatusRoHS non-compliant
- JESD-609 Codee0
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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