NTJD4001NT2G
- Manufacturer's Part No.:NTJD4001NT2G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET 2N-CH 30V 0.25A SOT363
- Datasheet:
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- Available: 8710
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTJD4001NT2G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2007
- Rise Time23ns
- FET FeatureStandard
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / Case6-TSSOP, SC-88, SOT-363
- Fall Time (Typ)23 ns
- Terminal FinishTin (Sn)
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- Power Dissipation272mW
- Number of Elements2
- Vgs(th) (Max) @ Id1.5V @ 100μA
- Turn-Off Delay Time94 ns
- Qualification StatusNot Qualified
- Element ConfigurationDual
- Max Power Dissipation272mW
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs1.5 Ω @ 10mA, 4V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)12 pF
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)0.25A
- Gate Charge (Qg) (Max) @ Vgs1.3nC @ 5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)250mA
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)30V
- Drain-source On Resistance-Max2.5Ohm
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds33pF @ 5V
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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