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NTJD4105CT1G

  • In Stock: 40000
  • Available: 797283

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.19467US $0.19
10+US $0.12978US $1.30
30+US $0.09734US $2.92
100+US $0.07787US $7.79
500+US $0.07138US $35.69
1000+US $0.06489US $64.89

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NTJD4105CT1G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Width
    1.35mm
  • Height
    1mm
  • Length
    2.2mm
  • FET Type
    N and P-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    6
  • Published
    2006
  • Rise Time
    23ns
  • Resistance
    220mOhm
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    920 mV
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Current Rating
    630mA
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    6
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Fall Time (Typ)
    36 ns
  • Terminal Finish
    Tin (Sn)
  • Base Part Number
    NTJD4105C
  • Lifecycle Status
    ACTIVE (Last Updated: 20 hours ago)
  • Factory Lead Time
    19 Weeks
  • Power Dissipation
    550mW
  • Threshold Voltage
    920mV
  • Number of Elements
    2
  • Turn On Delay Time
    83 ns
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    50 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    270mW
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    375m Ω @ 630mA, 4.5V
  • Transistor Application
    SWITCHING
  • Feedback Cap-Max (Crss)
    5 pF
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    3nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    8V
  • Continuous Drain Current (ID)
    775mA
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    20V 8V
  • Drain to Source Breakdown Voltage
    -8V
  • Input Capacitance (Ciss) (Max) @ Vds
    46pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    630mA 775mA

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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