NTJD4105CT1G
- Manufacturer's Part No.:NTJD4105CT1G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET N/P-CH 20V/8V SOT-363
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 40000
- Available: 797283
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.19467 | US $0.19 |
10+ | US $0.12978 | US $1.30 |
30+ | US $0.09734 | US $2.92 |
100+ | US $0.07787 | US $7.79 |
500+ | US $0.07138 | US $35.69 |
1000+ | US $0.06489 | US $64.89 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTJD4105CT1G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- Width1.35mm
- Height1mm
- Length2.2mm
- FET TypeN and P-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2006
- Rise Time23ns
- Resistance220mOhm
- FET FeatureLogic Level Gate
- Nominal Vgs920 mV
- Part StatusActive
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- Current Rating630mA
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / Case6-TSSOP, SC-88, SOT-363
- Fall Time (Typ)36 ns
- Terminal FinishTin (Sn)
- Base Part NumberNTJD4105C
- Lifecycle StatusACTIVE (Last Updated: 20 hours ago)
- Factory Lead Time19 Weeks
- Power Dissipation550mW
- Threshold Voltage920mV
- Number of Elements2
- Turn On Delay Time83 ns
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time50 ns
- Element ConfigurationDual
- Max Power Dissipation270mW
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations6
- Rds On (Max) @ Id, Vgs375m Ω @ 630mA, 4.5V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)5 pF
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs3nC @ 4.5V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)775mA
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)20V 8V
- Drain to Source Breakdown Voltage-8V
- Input Capacitance (Ciss) (Max) @ Vds46pF @ 20V
- Current - Continuous Drain (Id) @ 25°C630mA 775mA
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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