NTJD4105CT4G
- Manufacturer's Part No.:NTJD4105CT4G
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- Series:-
- Description:MOSFET N/P-CH 20V/8V SOT-363
- Datasheet:
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- Available: 13532
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTJD4105CT4G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- FET TypeN and P-Channel
- HTS Code8541.21.00.95
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2006
- Rise Time23ns
- FET FeatureLogic Level Gate
- Part StatusObsolete
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- Current Rating630mA
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / Case6-TSSOP, SC-88, SOT-363
- Fall Time (Typ)36 ns
- Terminal FinishTin (Sn)
- Base Part NumberNTJD4105C
- Power Dissipation270mW
- Number of Elements2
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Turn-Off Delay Time50 ns
- Qualification StatusNot Qualified
- Element ConfigurationDual
- Max Power Dissipation270mW
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Reach Compliance Codeunknown
- Number of Terminations6
- Rds On (Max) @ Id, Vgs375m Ω @ 630mA, 4.5V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)5 pF
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)1.1A
- Gate Charge (Qg) (Max) @ Vgs3nC @ 4.5V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)775mA
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)20V 8V
- Drain-source On Resistance-Max0.375Ohm
- Drain to Source Breakdown Voltage-8V
- Input Capacitance (Ciss) (Max) @ Vds46pF @ 20V
- Current - Continuous Drain (Id) @ 25°C630mA 775mA
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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