NTJD4152PT1G
- Manufacturer's Part No.:NTJD4152PT1G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET 2P-CH 20V 0.88A SOT-363
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 70928
- Available: 770421
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.18600 | US $0.19 |
10+ | US $0.12400 | US $1.24 |
30+ | US $0.09300 | US $2.79 |
100+ | US $0.07440 | US $7.44 |
500+ | US $0.06820 | US $34.10 |
1000+ | US $0.06200 | US $62.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTJD4152PT1G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- Time@Peak Reflow Temperature-Max (s)40
- Package / Case6-TSSOP, SC-88, SOT-363
- Part StatusActive
- Operating Temperature-55°C~150°C TJ
- Factory Lead Time11 Weeks
- Lifecycle StatusACTIVE (Last Updated: 23 hours ago)
- Number of Pins6
- PackagingTape & Reel (TR)
- SubcategoryOther Transistors
- Base Part NumberNTJD4152P
- Surface MountYES
- Number of Terminations6
- Terminal FinishTin (Sn)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Pin Count6
- Number of Elements2
- Lead FreeLead Free
- Radiation HardeningNo
- Published2000
- Pbfree Codeyes
- Current Rating-880mA
- Voltage - Rated DC-20V
- Height990.6μm
- Length2.1844mm
- Width1.3462mm
- Max Power Dissipation272mW
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Power Dissipation272mW
- Turn On Delay Time5.8 ns
- Turn-Off Delay Time13.5 ns
- Operating ModeENHANCEMENT MODE
- Drain Current-Max (Abs) (ID)0.88A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss)20V
- Continuous Drain Current (ID)880mA
- Resistance215MOhm
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage-20V
- Threshold Voltage-1.2V
- FET Type2 P-Channel (Dual)
- Vgs(th) (Max) @ Id1.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds155pF @ 20V
- Gate Charge (Qg) (Max) @ Vgs2.2nC @ 4.5V
- FET FeatureLogic Level Gate
- Rise Time6.5ns
- Fall Time (Typ)6.5 ns
- Rds On (Max) @ Id, Vgs260m Ω @ 880mA, 4.5V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- REACH SVHCNo SVHC
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