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NTJD4152PT1G

  • In Stock: 70928
  • Available: 2762

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.18600US $0.19
10+US $0.12400US $1.24
30+US $0.09300US $2.79
100+US $0.07440US $7.44
500+US $0.06820US $34.10
1000+US $0.06200US $62.00

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Product Parameter

  • Manufacturer
    TECH PUBLIC
  • Manufacturer's Part No.
    NTJD4152PT1G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Width
    1.3462mm
  • Height
    990.6μm
  • Length
    2.1844mm
  • FET Type
    2 P-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    6
  • Published
    2000
  • Rise Time
    6.5ns
  • Resistance
    215MOhm
  • FET Feature
    Logic Level Gate
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Current Rating
    -880mA
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    6
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Fall Time (Typ)
    6.5 ns
  • Terminal Finish
    Tin (Sn)
  • Base Part Number
    NTJD4152P
  • Lifecycle Status
    ACTIVE (Last Updated: 23 hours ago)
  • Factory Lead Time
    11 Weeks
  • Power Dissipation
    272mW
  • Threshold Voltage
    -1.2V
  • Number of Elements
    2
  • Turn On Delay Time
    5.8 ns
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Voltage - Rated DC
    -20V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    13.5 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    272mW
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    260m Ω @ 880mA, 4.5V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    0.88A
  • Gate Charge (Qg) (Max) @ Vgs
    2.2nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    12V
  • Continuous Drain Current (ID)
    880mA
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    20V
  • Drain to Source Breakdown Voltage
    -20V
  • Input Capacitance (Ciss) (Max) @ Vds
    155pF @ 20V

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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