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NTJD4152PT2G

  • Available: 3000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.33549US $0.34
10+US $0.22366US $2.24
30+US $0.16775US $5.03
100+US $0.13420US $13.42
500+US $0.12301US $61.50
1000+US $0.11183US $111.83

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NTJD4152PT2G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • FET Type
    2 P-Channel (Dual)
  • Packaging
    Tape & Reel (TR)
  • Published
    2015
  • FET Feature
    Standard
  • Part Status
    Active
  • Power - Max
    272mW
  • REACH Status
    REACH Unaffected
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Terminal Finish
    Tin (Sn)
  • Factory Lead Time
    11 Weeks
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Max Power Dissipation
    272mW
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    260m Ω @ 880mA, 4.5V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    20V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    0.88A
  • Gate Charge (Qg) (Max) @ Vgs
    2.2nC @ 4.5V
  • Continuous Drain Current (ID)
    880mA
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    20V
  • Drain-source On Resistance-Max
    0.26Ohm
  • Input Capacitance (Ciss) (Max) @ Vds
    155pF @ 20V

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PDSO-G6
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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