NTJD4401NT4G
- Manufacturer's Part No.:NTJD4401NT4G
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- Series:-
- Description:MOSFET 2N-CH 20V 0.63A SOT363
- Datasheet:
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- Available: 11421
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTJD4401NT4G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- MountSurface Mount
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2008
- Rise Time227ns
- FET FeatureLogic Level Gate
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating775mA
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / Case6-TSSOP, SC-88, SOT-363
- Fall Time (Typ)227 ns
- Terminal FinishTin (Sn)
- Base Part NumberNTJD4401N
- Power Dissipation270mW
- Number of Elements2
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Voltage - Rated DC20V
- Turn-Off Delay Time786 ns
- Qualification StatusNot Qualified
- Element ConfigurationDual
- Max Power Dissipation270mW
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs375m Ω @ 630mA, 4.5V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)5 pF
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs3nC @ 4.5V
- Gate to Source Voltage (Vgs)12V
- Continuous Drain Current (ID)630mA
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.375Ohm
- Drain to Source Breakdown Voltage20V
- Input Capacitance (Ciss) (Max) @ Vds46pF @ 20V
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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