NTJD5121NT2G
- Manufacturer's Part No.:NTJD5121NT2G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET 2N-CH 60V 0.295A SOT363
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 300000
- Available: 1023770
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.65000 | US $1.65 |
10+ | US $1.10000 | US $11.00 |
30+ | US $0.82500 | US $24.75 |
100+ | US $0.66000 | US $66.00 |
500+ | US $0.60500 | US $302.50 |
1000+ | US $0.55000 | US $550.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTJD5121NT2G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- Width1.35mm
- Height1mm
- Length2.2mm
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2011
- Rise Time34ns
- FET FeatureLogic Level Gate
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / Case6-TSSOP, SC-88, SOT-363
- Fall Time (Typ)32 ns
- Terminal FinishTin (Sn)
- Base Part NumberNTJD5121N
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time8 Weeks
- Power Dissipation250mW
- Threshold Voltage1.7V
- Additional FeatureLOW THRESHOLD
- Number of Elements2
- Turn On Delay Time22 ns
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time34 ns
- Element ConfigurationDual
- Max Power Dissipation250mW
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs1.6 Ω @ 500mA, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs0.9nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)295mA
- Drain to Source Voltage (Vdss)60V
- Drain to Source Breakdown Voltage60V
- Input Capacitance (Ciss) (Max) @ Vds26pF @ 20V
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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