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NTLJD3115PT1G

  • In Stock: 107876
  • Available: 432588

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.11600US $1.12
10+US $0.74400US $7.44
30+US $0.55800US $16.74
100+US $0.44640US $44.64
500+US $0.40920US $204.60
1000+US $0.37200US $372.00

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NTLJD3115PT1G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Width
    2mm
  • Height
    750μm
  • Length
    2mm
  • FET Type
    2 P-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    6
  • Published
    2006
  • Rise Time
    15ns
  • Resistance
    100MOhm
  • FET Feature
    Logic Level Gate
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    C BEND
  • Current Rating
    -4.1A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    6
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    6-WDFN Exposed Pad
  • Case Connection
    DRAIN
  • Contact Plating
    Tin
  • Fall Time (Typ)
    15 ns
  • Base Part Number
    NTLJD3115P
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    9 Weeks
  • Power Dissipation
    1.5W
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Number of Elements
    2
  • Turn On Delay Time
    6 ns
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Voltage - Rated DC
    -20V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    19.8 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    710mW
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    100m Ω @ 2A, 4.5V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    6.2nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    8V
  • Continuous Drain Current (ID)
    3.3A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Breakdown Voltage
    20V
  • Input Capacitance (Ciss) (Max) @ Vds
    531pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    2.3A

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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