NTLJD3119CTBG
- Manufacturer's Part No.:NTLJD3119CTBG
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:µCool™
- Description:MOSFET N/P-CH 20V 6WDFN
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 666
- Available: 356870
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.70000 | US $2.70 |
10+ | US $1.80000 | US $18.00 |
30+ | US $1.35000 | US $40.50 |
100+ | US $1.08000 | US $108.00 |
500+ | US $0.99000 | US $495.00 |
1000+ | US $0.90000 | US $900.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTLJD3119CTBG
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesµCool™
- ECCNEAR99
- Width2mm
- Height750μm
- Length2mm
- FET TypeN and P-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2005
- Rise Time13.2ns
- FET FeatureLogic Level Gate
- Nominal Vgs700 mV
- Part StatusActive
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / Case6-WDFN Exposed Pad
- Contact PlatingTin
- Fall Time (Typ)13.2 ns
- Base Part NumberNTLJD3119C
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time9 Weeks
- Power Dissipation710mW
- Threshold Voltage700mV
- Number of Elements2
- Turn On Delay Time5.2 ns
- Vgs(th) (Max) @ Id1V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time13.7 ns
- Element ConfigurationDual
- Max Power Dissipation710mW
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations6
- Rds On (Max) @ Id, Vgs65m Ω @ 3.8A, 4.5V
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)3.8A
- Gate Charge (Qg) (Max) @ Vgs3.7nC @ 4.5V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)4.6A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)20V
- Pulsed Drain Current-Max (IDM)18A
- Drain to Source Breakdown Voltage-20V
- Input Capacitance (Ciss) (Max) @ Vds271pF @ 10V
- Current - Continuous Drain (Id) @ 25°C2.6A 2.3A
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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