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NTLJD3183CZTBG

  • Available: 10438

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NTLJD3183CZTBG
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Package / Case
    6-WDFN Exposed Pad
  • Part Status
    Obsolete
  • Operating Temperature
    -55°C~150°C TJ
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 1 week ago)
  • Mount
    Surface Mount
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Number of Terminations
    6
  • Terminal Finish
    Tin (Sn)
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Pin Count
    6
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Lead Free
    Lead Free
  • Published
    2008
  • Pbfree Code
    yes
  • Case Connection
    DRAIN
  • Max Power Dissipation
    710mW
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Element Configuration
    Dual
  • Transistor Application
    SWITCHING
  • Power Dissipation
    1.5W
  • Turn-Off Delay Time
    14 ns
  • Operating Mode
    ENHANCEMENT MODE
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Continuous Drain Current (ID)
    2.2A
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    20V
  • FET Type
    N and P-Channel
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    355pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    7nC @ 4.5V
  • FET Feature
    Logic Level Gate
  • Rise Time
    9ns
  • Fall Time (Typ)
    12.5 ns
  • Current - Continuous Drain (Id) @ 25°C
    2.6A 2.2A
  • Rds On (Max) @ Id, Vgs
    68m Ω @ 2A, 4.5V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-609 Code
    e3

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