NTLJD3183CZTBG
- Manufacturer's Part No.:NTLJD3183CZTBG
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET N/P-CH 20V 6WDFN
- Datasheet:
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- Available: 10438
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTLJD3183CZTBG
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Package / Case6-WDFN Exposed Pad
- Part StatusObsolete
- Operating Temperature-55°C~150°C TJ
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- MountSurface Mount
- Number of Pins6
- PackagingTape & Reel (TR)
- Number of Terminations6
- Terminal FinishTin (Sn)
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- Lead FreeLead Free
- Published2008
- Pbfree Codeyes
- Case ConnectionDRAIN
- Max Power Dissipation710mW
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Power Dissipation1.5W
- Turn-Off Delay Time14 ns
- Operating ModeENHANCEMENT MODE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID)2.2A
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage20V
- FET TypeN and P-Channel
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds355pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs7nC @ 4.5V
- FET FeatureLogic Level Gate
- Rise Time9ns
- Fall Time (Typ)12.5 ns
- Current - Continuous Drain (Id) @ 25°C2.6A 2.2A
- Rds On (Max) @ Id, Vgs68m Ω @ 2A, 4.5V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
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