NTLJD4150PTBG
- Manufacturer's Part No.:NTLJD4150PTBG
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- Series:-
- Description:MOSFET 2P-CH 30V 1.8A 6WDFN
- Datasheet:
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- Available: 10938
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTLJD4150PTBG
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- MountSurface Mount
- FET Type2 P-Channel (Dual)
- HTS Code8541.29.00.95
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2007
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Pbfree Codeyes
- Power - Max700mW
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / Case6-WDFN Exposed Pad
- Case ConnectionDRAIN
- Terminal FinishTin (Sn)
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- Number of Elements1
- Vgs(th) (Max) @ Id2V @ 250μA
- Qualification StatusNot Qualified
- Max Power Dissipation700mW
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs135m Ω @ 4A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30V
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)2.7A
- Gate Charge (Qg) (Max) @ Vgs4.5nC @ 4.5V
- Continuous Drain Current (ID)1.8A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)30V
- Drain-source On Resistance-Max0.135Ohm
- Pulsed Drain Current-Max (IDM)14A
- Input Capacitance (Ciss) (Max) @ Vds300pF @ 15V
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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