NTLUD3191PZTBG
- Manufacturer's Part No.:NTLUD3191PZTBG
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET 2P-CH 20V 1.1A 6UDFN
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 13394
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTLUD3191PZTBG
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Package / Case6-UFDFN Exposed Pad
- Part StatusObsolete
- Operating Temperature-55°C~150°C TJ
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 19 hours ago)
- MountSurface Mount
- Number of Pins6
- PackagingTape & Reel (TR)
- Number of Terminations6
- Terminal FinishTin (Sn)
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- Lead FreeLead Free
- Published2009
- Pbfree Codeyes
- Case ConnectionDRAIN
- Max Power Dissipation500mW
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Power Dissipation500mW
- Turn-Off Delay Time68 ns
- Operating ModeENHANCEMENT MODE
- Drain Current-Max (Abs) (ID)1.1A
- Drain-source On Resistance-Max0.25Ohm
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss)20V
- Continuous Drain Current (ID)-1A
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage-20V
- FET Type2 P-Channel (Dual)
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds160pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs3.5nC @ 4.5V
- FET FeatureLogic Level Gate
- Rise Time24ns
- Fall Time (Typ)62 ns
- Current - Continuous Drain (Id) @ 25°C1.1A
- Rds On (Max) @ Id, Vgs250m Ω @ 1.5A, 4.5V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
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