NTMC1300R2
- Manufacturer's Part No.:NTMC1300R2
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET N/P-CH 30V 8SOIC
- Datasheet:
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- Available: 9005
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTMC1300R2
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Part StatusObsolete
- Operating Temperature-65°C~150°C TJ
- MountSurface Mount
- PackagingTape & Reel (TR)
- SubcategoryOther Transistors
- Number of Terminations8
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Reach Compliance Codenot_compliant
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Lead FreeContains Lead
- Published2004
- Current Rating3A
- Voltage - Rated DC30V
- Max Power Dissipation2W
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Transistor ApplicationSWITCHING
- Operating ModeENHANCEMENT MODE
- Drain Current-Max (Abs) (ID)2.2A
- Drain-source On Resistance-Max0.09Ohm
- Pulsed Drain Current-Max (IDM)8.5A
- Avalanche Energy Rating (Eas)75 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID)1.8A
- FET TypeN and P-Channel
- Vgs(th) (Max) @ Id2.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds300pF @ 20V
- Gate Charge (Qg) (Max) @ Vgs5nC @ 4.5V
- FET FeatureLogic Level Gate
- Rise Time11ns
- Current - Continuous Drain (Id) @ 25°C2.2A 1.8A
- Rds On (Max) @ Id, Vgs90m Ω @ 3A, 10V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusNon-RoHS Compliant
- JESD-609 Codee0
- JESD-30 CodeR-PDSO-G8
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