NTMD2C02R2G
- Manufacturer's Part No.:NTMD2C02R2G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET N/P-CH 20V 8SOIC
- Datasheet:
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- Available: 6702
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTMD2C02R2G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- FET TypeN and P-Channel
- PackagingTape & Reel (TR)
- Pin Count8
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Pbfree Codeyes
- Power - Max2W
- REACH StatusREACH Unaffected
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Terminal FinishMATTE TIN
- Terminal PositionDUAL
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements2
- Vgs(th) (Max) @ Id1.2V @ 250μA
- Qualification StatusCOMMERCIAL
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations8
- Rds On (Max) @ Id, Vgs43m Ω @ 4A, 4.5V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min20V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)5.2A
- Gate Charge (Qg) (Max) @ Vgs20nC @ 4.5V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)20V
- Drain-source On Resistance-Max0.043Ohm
- Pulsed Drain Current-Max (IDM)48A
- Input Capacitance (Ciss) (Max) @ Vds1100pF @ 10V
- Current - Continuous Drain (Id) @ 25°C5.2A 3.4A
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PDSO-G8
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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