NTMD4N03R2G
- Manufacturer's Part No.:NTMD4N03R2G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET 2N-CH 30V 4A 8SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 47500
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.70689 | US $0.71 |
10+ | US $0.47126 | US $4.71 |
30+ | US $0.35345 | US $10.60 |
100+ | US $0.28276 | US $28.28 |
500+ | US $0.25919 | US $129.60 |
1000+ | US $0.23563 | US $235.63 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTMD4N03R2G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- Width4mm
- Height1.5mm
- Length5mm
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2006
- Rise Time14ns
- Resistance48MOhm
- FET FeatureLogic Level Gate
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Powers
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- Current Rating4A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Contact PlatingTin
- Fall Time (Typ)10 ns
- Base Part NumberNTMD4N03
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time36 Weeks
- Power Dissipation2W
- Number of Elements2
- Turn On Delay Time7 ns
- Vgs(th) (Max) @ Id3V @ 250μA
- Voltage - Rated DC30V
- Radiation HardeningNo
- Turn-Off Delay Time16 ns
- Element ConfigurationDual
- Max Power Dissipation2W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs60m Ω @ 4A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)4A
- Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)4A
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds400pF @ 20V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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