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NTMD6N02R2G

  • In Stock: 100000
  • Available: 325745

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.94200US $3.94
10+US $3.54780US $35.48
30+US $2.75940US $82.78
100+US $2.26665US $226.67
500+US $2.16810US $1084.05
1000+US $1.97100US $1971.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NTMD6N02R2G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Width
    4mm
  • Height
    1.5mm
  • Length
    5mm
  • FET Type
    2 N-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2004
  • Rise Time
    50ns
  • Resistance
    35MOhm
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    900 mV
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    730mW
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Current Rating
    6A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Contact Plating
    Tin
  • Fall Time (Typ)
    80 ns
  • Base Part Number
    NTMD6N02
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    45 Weeks
  • Power Dissipation
    2W
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Number of Elements
    2
  • Turn On Delay Time
    12 ns
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Voltage - Rated DC
    20V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    45 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    2W
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    35m Ω @ 6A, 4.5V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    12V
  • Avalanche Energy Rating (Eas)
    360 mJ
  • Continuous Drain Current (ID)
    6.5A
  • Peak Reflow Temperature (Cel)
    260
  • Pulsed Drain Current-Max (IDM)
    30A
  • Drain to Source Breakdown Voltage
    20V
  • Input Capacitance (Ciss) (Max) @ Vds
    1100pF @ 16V
  • Current - Continuous Drain (Id) @ 25°C
    3.92A

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

  • Shipping Methods

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  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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