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NTMD6N04R2G

  • Available: 12008

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NTMD6N04R2G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Part Status
    Obsolete
  • Operating Temperature
    -55°C~150°C TJ
  • Lifecycle Status
    OBSOLETE (Last Updated: 3 days ago)
  • Number of Pins
    8
  • Packaging
    Tape & Reel (TR)
  • Subcategory
    FET General Purpose Powers
  • Base Part Number
    NTMD6N04
  • Surface Mount
    YES
  • Number of Terminations
    8
  • Terminal Finish
    Tin (Sn)
  • Terminal Form
    GULL WING
  • Pin Count
    8
  • Number of Elements
    2
  • Lead Free
    Lead Free
  • Radiation Hardening
    No
  • Published
    2007
  • Pbfree Code
    yes
  • Max Power Dissipation
    1.5W
  • Power - Max
    1.29W
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Element Configuration
    Dual
  • Transistor Application
    SWITCHING
  • Power Dissipation
    2W
  • Turn On Delay Time
    15 ns
  • Turn-Off Delay Time
    30 ns
  • Operating Mode
    ENHANCEMENT MODE
  • Drain-source On Resistance-Max
    0.034Ohm
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Drain to Source Voltage (Vdss)
    40V
  • Continuous Drain Current (ID)
    4.6A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    40V
  • FET Type
    2 N-Channel (Dual)
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    900pF @ 32V
  • Gate Charge (Qg) (Max) @ Vgs
    30nC @ 10V
  • FET Feature
    Logic Level Gate
  • Rise Time
    55ns
  • Fall Time (Typ)
    35 ns
  • Rds On (Max) @ Id, Vgs
    34m Ω @ 5.8A, 10V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-609 Code
    e3

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