NTMD6N04R2G
- Manufacturer's Part No.:NTMD6N04R2G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET 2N-CH 40V 4.6A 8SOIC
- Datasheet:
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- Available: 12008
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTMD6N04R2G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Part StatusObsolete
- Operating Temperature-55°C~150°C TJ
- Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
- Number of Pins8
- PackagingTape & Reel (TR)
- SubcategoryFET General Purpose Powers
- Base Part NumberNTMD6N04
- Surface MountYES
- Number of Terminations8
- Terminal FinishTin (Sn)
- Terminal FormGULL WING
- Pin Count8
- Number of Elements2
- Lead FreeLead Free
- Radiation HardeningNo
- Published2007
- Pbfree Codeyes
- Max Power Dissipation1.5W
- Power - Max1.29W
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Power Dissipation2W
- Turn On Delay Time15 ns
- Turn-Off Delay Time30 ns
- Operating ModeENHANCEMENT MODE
- Drain-source On Resistance-Max0.034Ohm
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss)40V
- Continuous Drain Current (ID)4.6A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage40V
- FET Type2 N-Channel (Dual)
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds900pF @ 32V
- Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
- FET FeatureLogic Level Gate
- Rise Time55ns
- Fall Time (Typ)35 ns
- Rds On (Max) @ Id, Vgs34m Ω @ 5.8A, 10V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
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