NTMD6P02R2G
- Manufacturer's Part No.:NTMD6P02R2G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET 2P-CH 20V 4.8A 8SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 2500
- Available: 242232
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.50000 | US $1.50 |
10+ | US $1.00000 | US $10.00 |
30+ | US $0.75000 | US $22.50 |
100+ | US $0.60000 | US $60.00 |
500+ | US $0.55000 | US $275.00 |
1000+ | US $0.50000 | US $500.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTMD6P02R2G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- Width4mm
- Height1.5mm
- Length5mm
- FET Type2 P-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2007
- Rise Time20ns
- Resistance33mOhm
- FET FeatureLogic Level Gate
- Part StatusActive
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- Current Rating-6A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Contact PlatingTin
- Fall Time (Typ)50 ns
- Base Part NumberNTMD6P02
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time29 Weeks
- Number of Outputs1
- Power Dissipation2W
- Threshold Voltage-880mV
- Additional FeatureLOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- Max Output Current6A
- Number of Elements2
- Vgs(th) (Max) @ Id1.2V @ 250μA
- Voltage - Rated DC-20V
- Radiation HardeningNo
- Turn-Off Delay Time85 ns
- Element ConfigurationDual
- Max Power Dissipation750mW
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs33m Ω @ 6.2A, 4.5V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)450 pF
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs35nC @ 4.5V
- Gate to Source Voltage (Vgs)12V
- Continuous Drain Current (ID)7.8A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)20V
- Drain to Source Breakdown Voltage-20V
- Input Capacitance (Ciss) (Max) @ Vds1700pF @ 16V
- Current - Continuous Drain (Id) @ 25°C4.8A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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