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NTMD6P02R2G

  • In Stock: 2500
  • Available: 242232

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.50000US $1.50
10+US $1.00000US $10.00
30+US $0.75000US $22.50
100+US $0.60000US $60.00
500+US $0.55000US $275.00
1000+US $0.50000US $500.00

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NTMD6P02R2G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Width
    4mm
  • Height
    1.5mm
  • Length
    5mm
  • FET Type
    2 P-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2007
  • Rise Time
    20ns
  • Resistance
    33mOhm
  • FET Feature
    Logic Level Gate
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Current Rating
    -6A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Contact Plating
    Tin
  • Fall Time (Typ)
    50 ns
  • Base Part Number
    NTMD6P02
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    29 Weeks
  • Number of Outputs
    1
  • Power Dissipation
    2W
  • Threshold Voltage
    -880mV
  • Additional Feature
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
  • Max Output Current
    6A
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Voltage - Rated DC
    -20V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    85 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    750mW
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    33m Ω @ 6.2A, 4.5V
  • Transistor Application
    SWITCHING
  • Feedback Cap-Max (Crss)
    450 pF
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    35nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    12V
  • Continuous Drain Current (ID)
    7.8A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    20V
  • Drain to Source Breakdown Voltage
    -20V
  • Input Capacitance (Ciss) (Max) @ Vds
    1700pF @ 16V
  • Current - Continuous Drain (Id) @ 25°C
    4.8A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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