NTMFS4833NT3G
- Manufacturer’s Part#:NTMFS4833NT3G
- Manufacturer:
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- Series:-
- ECAD Model:
- Description:MOSFET N-CH 30V 16A SO-8FL
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 9634
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $3.00000 | US $3.00 |
10+ | US $2.70000 | US $27.00 |
30+ | US $2.10000 | US $63.00 |
100+ | US $1.72500 | US $172.50 |
500+ | US $1.65000 | US $825.00 |
1000+ | US $1.50000 | US $1500.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part #NTMFS4833NT3G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- Series-
- ECCNEAR99
- Width6.1mm
- Height1.1mm
- Length5.1mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count5
- Published2006
- Rise Time34ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs1.5 V
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormFLAT
- Number of Pins5
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN, 5 Leads
- Case ConnectionDRAIN
- Fall Time (Typ)17 ns
- Terminal FinishTin (Sn)
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time16 Weeks
- Power Dissipation2.35W
- Terminal PositionDUAL
- Number of Elements1
- Turn On Delay Time25 ns
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time35 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max910mW Ta 125W Tc
- Number of Terminations5
- Rds On (Max) @ Id, Vgs2m Ω @ 30A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs88nC @ 11.5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)191A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.003Ohm
- Pulsed Drain Current-Max (IDM)288A
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds5600pF @ 12V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C16A Ta 156A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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