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NTQD6866R2G

  • Available: 10285

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NTQD6866R2G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • FET Type
    2 N-Channel (Dual)
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • FET Feature
    Logic Level Gate
  • Part Status
    Obsolete
  • Pbfree Code
    no
  • Power - Max
    940mW
  • REACH Status
    REACH Unaffected
  • Configuration
    COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-TSSOP (0.173, 4.40mm Width)
  • Terminal Finish
    MATTE TIN
  • Additional Feature
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Qualification Status
    COMMERCIAL
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    32m Ω @ 6.9A, 4.5V
  • Transistor Application
    SWITCHING
  • Feedback Cap-Max (Crss)
    175 pF
  • DS Breakdown Voltage-Min
    20V
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    4.7A
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 4.5V
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    20V
  • Drain-source On Resistance-Max
    0.032Ohm
  • Input Capacitance (Ciss) (Max) @ Vds
    1400pF @ 16V
  • Current - Continuous Drain (Id) @ 25°C
    4.7A

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PDSO-G8
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)

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