NTQD6968N
- Manufacturer's Part No.:NTQD6968N
- Manufacturer:
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- Sub-Categories:
- Series:-
- Description:MOSFET 2N-CH 20V 6.2A 8TSSOP
- Datasheet:
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- Available: 11000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTQD6968N
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Package / Case8-TSSOP (0.173, 4.40mm Width)
- Part StatusObsolete
- Operating Temperature-55°C~150°C TJ
- MountSurface Mount
- Number of Pins8
- PackagingTube
- Number of Terminations8
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements2
- ConfigurationCOMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
- Lead FreeContains Lead
- Published2006
- Current Rating7A
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Voltage - Rated DC20V
- Max Power Dissipation1.39W
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Transistor ApplicationSWITCHING
- Power Dissipation1.81W
- Turn-Off Delay Time60 ns
- Operating ModeENHANCEMENT MODE
- Drain-source On Resistance-Max0.03Ohm
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID)6.2A
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage20V
- FET Type2 N-Channel (Dual)
- Vgs(th) (Max) @ Id1.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds630pF @ 16V
- Gate Charge (Qg) (Max) @ Vgs17nC @ 4.5V
- FET FeatureLogic Level Gate
- Rise Time25ns
- Fall Time (Typ)25 ns
- Rds On (Max) @ Id, Vgs22m Ω @ 7A, 4.5V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- ECCN CodeEAR99
- RoHS StatusNon-RoHS Compliant
- JESD-609 Codee0
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