NTR5103NT1G
- Manufacturer's Part No.:NTR5103NT1G
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- Description:MOSFET N-CH 60V 0.26A SOT23
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- In Stock: 2000000
- Available: 3053262
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.06390 | US $0.06 |
10+ | US $0.04260 | US $0.43 |
30+ | US $0.03195 | US $0.96 |
100+ | US $0.02556 | US $2.56 |
500+ | US $0.02343 | US $11.72 |
1000+ | US $0.02130 | US $21.30 |
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- Description
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The NTR5103NT1G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for a variety of applications, including power management, switching, and amplification in electronic circuits.
Key Features:
- Type: N-channel MOSFET
- Package: The NTR5103NT1G is typically housed in a compact SOT-23 package, which is suitable for surface mounting. This package design allows for efficient thermal management and space-saving on printed circuit boards (PCBs).
- Voltage Rating: The MOSFET has a maximum drain-source voltage (V_DS) rating of 30V, making it suitable for low to medium voltage applications.
- Current Rating: It can handle a continuous drain current (I_D) of up to 3.5A, which provides flexibility in various circuit designs.
- R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.045 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses and improved efficiency in switching applications.
- Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 1V to 3V, allowing for easy drive with low-voltage control signals.
- Switching Speed: The NTR5103NT1G features fast switching capabilities, making it ideal for high-frequency applications.
- Thermal Resistance: The device has a low thermal resistance, which helps in managing heat dissipation during operation.
Applications:
The NTR5103NT1G is suitable for a wide range of applications, including:
- Power management circuits
- Load switching
- Motor control
- DC-DC converters
- Battery management systems
- LED drivers
Electrical Characteristics:
- Maximum Gate-Source Voltage (V_GS): ±20V
- Maximum Power Dissipation (P_D): Typically around 1.5W, depending on the thermal conditions.
- Operating Temperature Range: The device can operate in a temperature range from -55°C to +150°C, making it suitable for various environmental conditions.
Conclusion:
The NTR5103NT1G from ON Semiconductor is a versatile and efficient N-channel MOSFET that offers excellent performance for a variety of electronic applications. Its compact size, low on-resistance, and high current handling capabilities make it a popular choice among engineers and designers looking to optimize their circuit designs for efficiency and reliability.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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