NTZD3152PT1G
- Manufacturer's Part No.:NTZD3152PT1G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET 2P-CH 20V 0.43A SOT-563
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 532000
- Available: 861075
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.15246 | US $0.15 |
10+ | US $0.10164 | US $1.02 |
30+ | US $0.07623 | US $2.29 |
100+ | US $0.06098 | US $6.10 |
500+ | US $0.05590 | US $27.95 |
1000+ | US $0.05082 | US $50.82 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTZD3152PT1G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- Width1.3mm
- Height600μm
- Length1.7mm
- FET Type2 P-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2003
- Rise Time12ns
- Resistance500mOhm
- FET FeatureStandard
- Part StatusActive
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormFLAT
- Current Rating-430mA
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / CaseSOT-563, SOT-666
- Fall Time (Typ)12 ns
- Terminal FinishTin (Sn)
- Base Part NumberNTZD3152P
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time10 Weeks
- Power Dissipation250mW
- Additional FeatureESD PROTECTION, LOW THRESHOLD
- Number of Elements2
- Turn On Delay Time10 ns
- Vgs(th) (Max) @ Id1V @ 250μA
- Voltage - Rated DC-20V
- Radiation HardeningNo
- Turn-Off Delay Time35 ns
- Element ConfigurationDual
- Max Power Dissipation250mW
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs900m Ω @ 430mA, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)0.43A
- Gate Charge (Qg) (Max) @ Vgs2.5nC @ 4.5V
- Gate to Source Voltage (Vgs)6V
- Continuous Drain Current (ID)430mA
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)20V
- Drain to Source Breakdown Voltage-20V
- Input Capacitance (Ciss) (Max) @ Vds175pF @ 16V
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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