NTZD3154NT1G
- Manufacturer's Part No.:NTZD3154NT1G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET 2N-CH 20V 0.54A SOT-563
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 180000
- Available: 1125678
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.05500 | US $0.06 |
10+ | US $0.03667 | US $0.37 |
30+ | US $0.02750 | US $0.83 |
100+ | US $0.02200 | US $2.20 |
500+ | US $0.02017 | US $10.09 |
1000+ | US $0.01833 | US $18.33 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTZD3154NT1G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- Time@Peak Reflow Temperature-Max (s)40
- Package / CaseSOT-563, SOT-666
- Part StatusActive
- Operating Temperature-55°C~150°C TJ
- Factory Lead Time15 Weeks
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Number of Pins6
- PackagingTape & Reel (TR)
- SubcategoryFET General Purpose Power
- Base Part NumberNTZD3154N
- Surface MountYES
- Number of Terminations6
- Terminal FinishTin (Sn)
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Pin Count6
- Number of Elements2
- Lead FreeLead Free
- Radiation HardeningNo
- Published2005
- Pbfree Codeyes
- Current Rating540mA
- Voltage - Rated DC20V
- Height600μm
- Length1.7mm
- Width1.3mm
- Max Power Dissipation250mW
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Power Dissipation250mW
- Turn On Delay Time6 ns
- Turn-Off Delay Time16 ns
- Operating ModeENHANCEMENT MODE
- Drain Current-Max (Abs) (ID)0.54A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID)540mA
- Resistance400MOhm
- Gate to Source Voltage (Vgs)6V
- Drain to Source Breakdown Voltage20V
- Threshold Voltage1V
- FET Type2 N-Channel (Dual)
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds150pF @ 16V
- Gate Charge (Qg) (Max) @ Vgs2.5nC @ 4.5V
- FET FeatureStandard
- Rise Time4ns
- Fall Time (Typ)4 ns
- Rds On (Max) @ Id, Vgs550m Ω @ 540mA, 4.5V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- REACH SVHCNo SVHC
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