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NTZD3155CT1G

  • In Stock: 400000
  • Available: 796468

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.56700US $0.57
10+US $0.37800US $3.78
30+US $0.28350US $8.50
100+US $0.22680US $22.68
500+US $0.20790US $103.95
1000+US $0.18900US $189.00

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NTZD3155CT1G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Package / Case
    SOT-563, SOT-666
  • Part Status
    Active
  • Operating Temperature
    -55°C~150°C TJ
  • Factory Lead Time
    12 Weeks
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Subcategory
    Other Transistors
  • Base Part Number
    NTZD3155C
  • Surface Mount
    YES
  • Number of Terminations
    6
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Pin Count
    6
  • Number of Elements
    2
  • Lead Free
    Lead Free
  • Radiation Hardening
    No
  • Published
    2007
  • Pbfree Code
    yes
  • Current Rating
    540mA
  • Contact Plating
    Tin
  • Height
    600μm
  • Length
    1.7mm
  • Width
    1.3mm
  • Max Power Dissipation
    250mW
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Element Configuration
    Dual
  • Transistor Application
    SWITCHING
  • Power Dissipation
    250mW
  • Turn On Delay Time
    10 ns
  • Turn-Off Delay Time
    35 ns
  • Operating Mode
    ENHANCEMENT MODE
  • Drain Current-Max (Abs) (ID)
    0.54A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Drain to Source Voltage (Vdss)
    20V
  • Continuous Drain Current (ID)
    540mA
  • Resistance
    500mOhm
  • Gate to Source Voltage (Vgs)
    6V
  • Drain to Source Breakdown Voltage
    -20V
  • Threshold Voltage
    1V
  • FET Type
    N and P-Channel
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    150pF @ 16V
  • Gate Charge (Qg) (Max) @ Vgs
    2.5nC @ 4.5V
  • FET Feature
    Logic Level Gate
  • Rise Time
    12ns
  • Fall Time (Typ)
    12 ns
  • Current - Continuous Drain (Id) @ 25°C
    540mA 430mA
  • Rds On (Max) @ Id, Vgs
    550m Ω @ 540mA, 4.5V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • REACH SVHC
    No SVHC

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