NTZD3155CT1G
- Manufacturer's Part No.:NTZD3155CT1G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET N/P-CH 20V SOT-563
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 400000
- Available: 796468
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.56700 | US $0.57 |
10+ | US $0.37800 | US $3.78 |
30+ | US $0.28350 | US $8.50 |
100+ | US $0.22680 | US $22.68 |
500+ | US $0.20790 | US $103.95 |
1000+ | US $0.18900 | US $189.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTZD3155CT1G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Time@Peak Reflow Temperature-Max (s)40
- Package / CaseSOT-563, SOT-666
- Part StatusActive
- Operating Temperature-55°C~150°C TJ
- Factory Lead Time12 Weeks
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Number of Pins6
- PackagingTape & Reel (TR)
- SubcategoryOther Transistors
- Base Part NumberNTZD3155C
- Surface MountYES
- Number of Terminations6
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Pin Count6
- Number of Elements2
- Lead FreeLead Free
- Radiation HardeningNo
- Published2007
- Pbfree Codeyes
- Current Rating540mA
- Contact PlatingTin
- Height600μm
- Length1.7mm
- Width1.3mm
- Max Power Dissipation250mW
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Power Dissipation250mW
- Turn On Delay Time10 ns
- Turn-Off Delay Time35 ns
- Operating ModeENHANCEMENT MODE
- Drain Current-Max (Abs) (ID)0.54A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss)20V
- Continuous Drain Current (ID)540mA
- Resistance500mOhm
- Gate to Source Voltage (Vgs)6V
- Drain to Source Breakdown Voltage-20V
- Threshold Voltage1V
- FET TypeN and P-Channel
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds150pF @ 16V
- Gate Charge (Qg) (Max) @ Vgs2.5nC @ 4.5V
- FET FeatureLogic Level Gate
- Rise Time12ns
- Fall Time (Typ)12 ns
- Current - Continuous Drain (Id) @ 25°C540mA 430mA
- Rds On (Max) @ Id, Vgs550m Ω @ 540mA, 4.5V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- REACH SVHCNo SVHC
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