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NTZD3155CT2G

  • In Stock: 123890
  • Available: 966829

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.15180US $0.15
10+US $0.10120US $1.01
30+US $0.07590US $2.28
100+US $0.06072US $6.07
500+US $0.05566US $27.83
1000+US $0.05060US $50.60

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NTZD3155CT2G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Package / Case
    SOT-563, SOT-666
  • Part Status
    Active
  • Operating Temperature
    -55°C~150°C TJ
  • Factory Lead Time
    13 Weeks
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Subcategory
    Other Transistors
  • Base Part Number
    NTZD3155C
  • Surface Mount
    YES
  • Number of Terminations
    6
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Pin Count
    6
  • Number of Elements
    2
  • Lead Free
    Lead Free
  • Radiation Hardening
    No
  • Published
    2007
  • Pbfree Code
    yes
  • Current Rating
    540mA
  • Voltage - Rated DC
    20V
  • Contact Plating
    Tin
  • Max Power Dissipation
    250mW
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Element Configuration
    Dual
  • Transistor Application
    SWITCHING
  • Power Dissipation
    250mW
  • Turn-Off Delay Time
    35 ns
  • Operating Mode
    ENHANCEMENT MODE
  • Drain Current-Max (Abs) (ID)
    0.54A
  • Drain-source On Resistance-Max
    0.55Ohm
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Continuous Drain Current (ID)
    540mA
  • Gate to Source Voltage (Vgs)
    6V
  • Drain to Source Breakdown Voltage
    20V
  • FET Type
    N and P-Channel
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    150pF @ 16V
  • Gate Charge (Qg) (Max) @ Vgs
    2.5nC @ 4.5V
  • FET Feature
    Logic Level Gate
  • Rise Time
    12ns
  • Fall Time (Typ)
    19 ns
  • Nominal Vgs
    1 V
  • Current - Continuous Drain (Id) @ 25°C
    540mA 430mA
  • Rds On (Max) @ Id, Vgs
    550m Ω @ 540mA, 4.5V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • REACH SVHC
    No SVHC

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