NTZD3155CT2G
- Manufacturer's Part No.:NTZD3155CT2G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET N/P-CH 20V SOT-563
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 123890
- Available: 966829
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.15180 | US $0.15 |
10+ | US $0.10120 | US $1.01 |
30+ | US $0.07590 | US $2.28 |
100+ | US $0.06072 | US $6.07 |
500+ | US $0.05566 | US $27.83 |
1000+ | US $0.05060 | US $50.60 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTZD3155CT2G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Time@Peak Reflow Temperature-Max (s)40
- Package / CaseSOT-563, SOT-666
- Part StatusActive
- Operating Temperature-55°C~150°C TJ
- Factory Lead Time13 Weeks
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Number of Pins6
- PackagingTape & Reel (TR)
- SubcategoryOther Transistors
- Base Part NumberNTZD3155C
- Surface MountYES
- Number of Terminations6
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Pin Count6
- Number of Elements2
- Lead FreeLead Free
- Radiation HardeningNo
- Published2007
- Pbfree Codeyes
- Current Rating540mA
- Voltage - Rated DC20V
- Contact PlatingTin
- Max Power Dissipation250mW
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Power Dissipation250mW
- Turn-Off Delay Time35 ns
- Operating ModeENHANCEMENT MODE
- Drain Current-Max (Abs) (ID)0.54A
- Drain-source On Resistance-Max0.55Ohm
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID)540mA
- Gate to Source Voltage (Vgs)6V
- Drain to Source Breakdown Voltage20V
- FET TypeN and P-Channel
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds150pF @ 16V
- Gate Charge (Qg) (Max) @ Vgs2.5nC @ 4.5V
- FET FeatureLogic Level Gate
- Rise Time12ns
- Fall Time (Typ)19 ns
- Nominal Vgs1 V
- Current - Continuous Drain (Id) @ 25°C540mA 430mA
- Rds On (Max) @ Id, Vgs550m Ω @ 540mA, 4.5V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- REACH SVHCNo SVHC
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