NTZD3156CT2G
- Manufacturer's Part No.:NTZD3156CT2G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET N/P-CH 20V SOT-563
- Datasheet:
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- Available: 14143
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTZD3156CT2G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- MountSurface Mount
- FET TypeN and P-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2008
- Rise Time6.5ns
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / CaseSOT-563, SOT-666
- Fall Time (Typ)6.5 ns
- Terminal FinishTin (Sn)
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
- Power Dissipation280mW
- Number of Elements2
- Vgs(th) (Max) @ Id1V @ 250μA
- Turn-Off Delay Time29 ns
- Qualification StatusNot Qualified
- Element ConfigurationDual
- Max Power Dissipation250mW
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations6
- Rds On (Max) @ Id, Vgs550m Ω @ 540mA, 4.5V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)0.54A
- Gate Charge (Qg) (Max) @ Vgs2.5nC @ 4.5V
- Gate to Source Voltage (Vgs)6V
- Continuous Drain Current (ID)540mA
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.55Ohm
- Drain to Source Breakdown Voltage20V
- Input Capacitance (Ciss) (Max) @ Vds72pF @ 16V
- Current - Continuous Drain (Id) @ 25°C540mA 430mA
Environmental & Export Classifications
- HTSUS8541.21.0095
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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