NTZD5110NT1G
- Manufacturer's Part No.:NTZD5110NT1G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET 2N-CH 60V 0.294A SOT563
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 59787
- Available: 921574
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.18300 | US $0.18 |
10+ | US $0.12200 | US $1.22 |
30+ | US $0.09150 | US $2.75 |
100+ | US $0.07320 | US $7.32 |
500+ | US $0.06710 | US $33.55 |
1000+ | US $0.06100 | US $61.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTZD5110NT1G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- Width1.3mm
- Height600μm
- Length1.7mm
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2007
- Rise Time7.3ns
- Resistance1.6Ohm
- FET FeatureLogic Level Gate
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / CaseSOT-563, SOT-666
- Contact PlatingTin
- Fall Time (Typ)7.3 ns
- Base Part NumberNTZD5110N
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time4 Weeks
- Power Dissipation250mW
- Number of Elements2
- Turn On Delay Time12 ns
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time63.7 ns
- Element ConfigurationDual
- Max Power Dissipation900mW
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs1.6 Ω @ 500mA, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs0.7nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)294mA
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)60V
- Drain to Source Breakdown Voltage60V
- Input Capacitance (Ciss) (Max) @ Vds24.5pF @ 20V
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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