NTZD5110NT5G
- Manufacturer's Part No.:NTZD5110NT5G
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- Series:-
- Description:MOSFET 2N-CH 60V 0.294A SOT563
- Datasheet:
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- Available: 7097
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NTZD5110NT5G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2007
- Rise Time7.3ns
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / CaseSOT-563, SOT-666
- Fall Time (Typ)7.3 ns
- Terminal FinishTin (Sn)
- Base Part NumberNTZD5110N
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- Power Dissipation250mW
- Number of Elements2
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Turn-Off Delay Time63.7 ns
- Qualification StatusNot Qualified
- Element ConfigurationDual
- Max Power Dissipation250mW
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs1.6 Ω @ 500mA, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)0.294A
- Gate Charge (Qg) (Max) @ Vgs0.7nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)294mA
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)60V
- Drain to Source Breakdown Voltage60V
- Input Capacitance (Ciss) (Max) @ Vds24.5pF @ 20V
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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