NUP1105LT1G
- Manufacturer's Part No.:NUP1105LT1G
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- Series:Automotive, AEC-Q101
- Description:TVS DIODE 24V 44V SOT23-3
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- Quantity:Buy NowAdd to Cart
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- In Stock: 174737
- Available: 994062
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.31350 | US $0.31 |
10+ | US $0.20900 | US $2.09 |
30+ | US $0.15675 | US $4.70 |
100+ | US $0.12540 | US $12.54 |
500+ | US $0.11495 | US $57.48 |
1000+ | US $0.10450 | US $104.50 |
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- Description
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- Shopping Guide
The NUP1105LT1G is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for low-voltage applications and is particularly suitable for power management and switching applications. Here’s a detailed description of its features and specifications:
Key Features:
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Dual N-Channel Configuration: The NUP1105LT1G contains two N-channel MOSFETs in a single package, allowing for compact designs and efficient use of board space.
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Low On-Resistance (RDS(on)): The device boasts a low on-resistance, which minimizes power loss during operation. This characteristic is crucial for applications requiring high efficiency.
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High-Speed Switching: The MOSFET is designed for fast switching speeds, making it ideal for applications such as DC-DC converters, motor drivers, and other power management circuits.
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Low Gate Threshold Voltage (VGS(th)): The gate threshold voltage is low, enabling the device to be driven by low-voltage control signals, which is beneficial in battery-operated devices.
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Thermal Performance: The package is designed to provide good thermal performance, allowing for efficient heat dissipation during operation.
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Compact Package: The NUP1105LT1G is typically available in a small surface-mount package (such as the SOT-23), which is advantageous for space-constrained applications.
Electrical Specifications:
- Maximum Drain-Source Voltage (VDS): The device can handle a maximum drain-source voltage, making it suitable for various voltage levels in power applications.
- Continuous Drain Current (ID): The maximum continuous drain current rating indicates the amount of current the MOSFET can handle without overheating.
- Gate-Source Voltage (VGS): The maximum gate-source voltage rating defines the limits for the gate drive voltage.
Applications:
The NUP1105LT1G is commonly used in:
- Power management circuits
- Load switching applications
- Motor control
- Battery management systems
- DC-DC converters
- LED drivers
Conclusion:
The NUP1105LT1G from ON Semiconductor is a versatile and efficient dual N-channel MOSFET that is well-suited for a variety of low-voltage power applications. Its combination of low on-resistance, high-speed switching capabilities, and compact packaging makes it an excellent choice for modern electronic designs requiring efficient power management solutions.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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