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NUS5530MNR2G

  • Available: 164129

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.70940US $1.71
10+US $1.13960US $11.40
30+US $0.85470US $25.64
100+US $0.68376US $68.38
500+US $0.62678US $313.39
1000+US $0.56980US $569.80

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NUS5530MNR2G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Special Purpose
  • Series
    -
  • ECCN
    EAR99
  • Width
    3.3mm
  • Height
    950μm
  • Length
    3.3mm
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2006
  • VCEsat-Max
    0.3 V
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • Applications
    General Purpose
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • Max Frequency
    100MHz
  • Mounting Type
    Surface Mount
  • Rise Time-Max
    55ns
  • Surface Mount
    YES
  • Current Rating
    3.9A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-VDFN Exposed Pad
  • Terminal Finish
    Tin (Sn)
  • Transistor Type
    NPN, P-Channel
  • Voltage - Rated
    35V PNP 20V P-Channel
  • Base Part Number
    NUS5530MN
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    2 Weeks
  • Power Dissipation
    635mW
  • Fall Time-Max (tf)
    70ns
  • Number of Elements
    1
  • Radiation Hardening
    No
  • Current Rating (Amps)
    2A PNP 3.9A P-Channel
  • Element Configuration
    Dual
  • Max Collector Current
    2A
  • Max Power Dissipation
    2.5W
  • Number of Terminations
    8
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    20V
  • DC Current Gain-Min (hFE)
    100
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Drain to Source Resistance
    200Ohm
  • Reflow Temperature-Max (s)
    40
  • Emitter Base Voltage (VEBO)
    -5V
  • Gate to Source Voltage (Vgs)
    -35V
  • Collector Base Voltage (VCBO)
    -55V
  • Continuous Drain Current (ID)
    -3.9A
  • Peak Reflow Temperature (Cel)
    260
  • Pulsed Drain Current-Max (IDM)
    20A
  • Collector Emitter Voltage (VCEO)
    35V
  • Collector Emitter Saturation Voltage
    -100mV

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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