NVMD6N04R2G
- Manufacturer's Part No.:NVMD6N04R2G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET 2N-CH 40V 4.6A 8-SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 23
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.36614 | US $1.37 |
10+ | US $0.91076 | US $9.11 |
30+ | US $0.68307 | US $20.49 |
100+ | US $0.54646 | US $54.65 |
500+ | US $0.50092 | US $250.46 |
1000+ | US $0.45538 | US $455.38 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NVMD6N04R2G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2012
- FET FeatureStandard
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Contact PlatingTin
- Lifecycle StatusACTIVE (Last Updated: 15 hours ago)
- Factory Lead Time38 Weeks
- Vgs(th) (Max) @ Id3V @ 250μA
- Element ConfigurationDual
- Max Power Dissipation1.29W
- Rds On (Max) @ Id, Vgs34m Ω @ 5.8A, 10V
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Reflow Temperature-Max (s)NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)4.6A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)40V
- Input Capacitance (Ciss) (Max) @ Vds900pF @ 32V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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